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1,000 Watt Pulsed Power Amplifier
2014-08-29 16:32:51| rfglobalnet Products
API Technologies has expanded its line of Gallium Nitride (GaN) based power amplifiers to include designs that operate with output power levels up to 1,000 watts and frequencies to 18 GHz.
Tags: power
watt
amplifier
pulsed
1,000 Watt Pulsed Power Amplifier Targeted for TWT Replacement Datasheet
2014-08-28 12:05:51| rfglobalnet Home Page
API Technologies has expanded its line of Gallium Nitride (GaN) based power amplifiers to include designs that operate with output power levels up to 1,000 watts and frequencies to 18 GHz. These pulsed power amplifiers' long life and reduced size and weight offer longer life and better efficiencies than their TWT counterparts,
Tags: power
replacement
targeted
watt
1,000 Watt Pulsed Power Amplifier Targeted for TWT Replacement
2014-08-28 12:00:27| rfglobalnet Home Page
API Technologies has expanded its line of Gallium Nitride (GaN) based power amplifiers to include designs that operate with output power levels up to 1,000 watts and frequencies to 18 GHz. These pulsed power amplifiers' long life and reduced size and weight offer longer life and better efficiencies than their TWT counterparts.
Tags: power
replacement
targeted
watt
MACOM Extends Industry Leading GaN Portfolio With New 15 W GaN On SiC Pulsed Power Transistor
2014-08-26 07:05:48| rfglobalnet Home Page
M/A-COM Technology Solutions Inc. (“MACOM”), a leading supplier of high performance RF, microwave, and millimeter wave products, recently announced a new GaN on SiC HEMT Pulsed Power Transistor for civilian and military radar pulsed applications.
Tags: power
industry
leading
portfolio
HEMT Power Transistor suits L-Band pulsed radar applications.
2014-08-08 15:45:07| Industrial Newsroom - All News for Today
Operating from 1,200–1,400 MHz, Model MAGX-001214-650L00 guarantees 650 W of peak power with typical 19.5 dB of gain and 60% efficiency. Gold-metalized, pre-matched GaN on Silicon Carbide transistor features very high breakdown voltages, which allow stable operation at 50 V under extreme load mismatch conditions. Assembled in ceramic flange package, transistor provides rugged performance in demanding radar applications. This story is related to the following:Power Transistors |
Tags: power
applications
suits
radar
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