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GaN on SiC HEMT Pulsed Power Transistors offer 650 W peak output.

2015-03-27 13:31:09| Industrial Newsroom - All News for Today

Available in standard flange or earless flange packaging, MAGX-000912-650L00 and MAGX-000912-650L0S are gallium nitride (GaN) on silicon carbide (SiC) HEMT pulsed power transistors intended for L-band pulsed avionics applications. These gold metalized, internally matched, GaN on SiC depletion mode RF power transistors operate over 960–1,215 MHz range and feature 600 year MTTF. Peak output power is 650 W with 20 dB typ gain and 62% drain efficiency.

Tags: power offer output peak

 

MACOM Announces New 650 W GaN On SiC HEMT Pulsed Power Transistor

2015-03-24 06:43:30| wirelessdesignonline News Articles

M/A-COM Technology Solutions Inc. (“MACOM”), a leading supplier of high-performance analog RF, microwave and optical semiconductor products, today announced the new MAGX-000912-650L00 and MAGX-000912-650L0S, a 650 W gallium nitride (GaN) on silicon carbide (SiC) HEMT pulsed power transistor for L-band pulsed avionics applications.

Tags: power sic announces gan

 
 

High-Power Pulsed Laser Diode Module is used for optical testing.

2015-03-23 13:31:09| Industrial Newsroom - All News for Today

Designed for use in optical spectrum analyzers (OSAs) and optical time domain reflectometers (OTDRs) for optical testing applications, SCW 1632-350R operates at 1,625 nm and features optical power of 350 mW typ. Ridge waveguide (RWG) Fabry-Perot (FP) laser diode, housed in 14-pin butterfly package, is optically coupled to single-mode fiber (SMF) pigtail and includes thermoelectric cooler (TEC) and electrically isolated, temperature-sensing thermistor.

Tags: testing module laser optical

 

MACOM Announces New 650 W GaN On SiC HEMT Pulsed Power Transistor

2015-03-20 05:45:46| rfglobalnet Home Page

M/A-COM Technology Solutions Inc. (“MACOM”), a leading supplier of high-performance analog RF, microwave and optical semiconductor products, recently announced the new MAGX-000912-650L00 and MAGX-000912-650L0S, a 650 W gallium nitride (GaN) on silicon carbide (SiC) HEMT pulsed power transistor for L-band pulsed avionics applications. This transistor is available in standard flange or earless flange packaging.

Tags: power sic announces gan

 

S-Band 7 W Pulsed High Power Amplifier features balanced design.

2015-01-21 14:30:57| Industrial Newsroom - All News for Today

Covering 2.7–3.0 GHz from 6 mm PQFN 28-lead SMT package, MAAP-011022 can be used individually or in complete MACOM chipset solution for Civil Air Traffic Control and Weather Radar applications. Encapsulated IC, which offers 7 W of pulsed power and 23 dB small signal gain, provides rugged performance under load mismatch. Other features include +10 V bias operation, 50 Ω impedance, and 0.5 µm pHEMT process. Design is RoHS compliant and 260° reflow compatible.

Tags: high design power features

 

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