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High Linearity/High Gain Low-Noise Amplifier

2013-06-28 11:15:40| wirelessdesignonline Products

This GaAs pHEMT and HBT two-stage low-noise amplifier (LNA) features wideband performance (useable to 1.1 GHz), +5 V operation, and high gain (38 dB@ 849 MHz). It’s ideal for use in ultra low-noise, high gain, and high linearity systems as well as GSM, CDMA, WCDMA, and cellular infrastructure systems.

Tags: high gain amplifier high gain

IDT Expands Industry-Leading Timing Portfolio With Low-Noise Timing Chipset For Wireless Base Station Radio Cards

2013-06-21 10:22:41| rfglobalnet News Articles

Integrated Device Technology, Inc. (IDT), the Analog and Digital Company delivering essential mixed-signal semiconductor solutions, recently announced a low-noise timing chipset optimized for use in wireless base transceiver station (BTS) radio cards.

Tags: base radio cards station

IDT Expands Industry-Leading Timing Portfolio With Low-Noise Timing Chipset For Wireless Base Station Radio Cards

2013-06-20 08:30:00| wirelessdesignonline News Articles

Tags: base radio cards station

New Freescale Broadband Low-Noise Amplifier Helps Designers Optimize Receiver Performance

2013-05-24 08:47:09| rfglobalnet News Articles

Freescale Semiconductor has introduced a new enhancement-mode pHEMT low noise amplifier (LNA) based on GaAs process technology and designed to optimize receiver performance for a broad array of wireless systems operating between 700 and 1400 MHz. Typical applications include small cell and macrocell transceivers, as well as a range of applications requiring extremely low noise figures, high linearity, and high RF output power.

Tags: performance helps designers broadband