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Low-Barrier Silicon Schottky Diode: SMS7621-060

2015-05-06 14:53:43| wirelessdesignonline Products

The SMS7621-060 is a silicon, low-barrier N-type Schottky diode. This surface mount diode has an ultra-miniature 0201 footprint, and a low series resistance which enables great performance as a low-level mixer at frequencies above 26 GHz.

Tags: silicon diode schottky schottky diode

 

New Vishay Intertechnology Standard, Schottky, And FRED Pt Rectifiers Increase Power Density With SMF Package

2015-01-19 04:02:11| electronicsweb Home Page

Vishay Intertechnology, Inc. recently introduced six new rectifiers in the compact, low-profile, surface-mount SMF (DO-219AB) eSMP package

Tags: with power standard increase

 
 

Schottky Rectifiers serve LED lighting and telecom applications.

2014-09-26 14:31:07| Industrial Newsroom - All News for Today

RoHS-compliant and halogen-free 200 V Gen-2 TMBS® Trench MOS Barrier Schottky rectifiers, with current ratings from 5&ndash;30 A, come in 4 power packages and offer forward voltage drops down to 0.65 V typ at 15 A. While TO-220AB, TO-220AC, and TO-262AA packages feature solder bath temperatures of 275°C max, 10 sec, per JESD 22-B106, TO-263AB package offers MSL moisture sensitivity level of 1, per J-STD-020, LF max peak of 245°C. Applications include telecom power supplies and LED lighting.<br /> This story is related to the following:Schottky Rectifiers

Tags: applications led serve lighting

 

Silicon Power Schottky Diodes suit high-frequency applications.

2014-07-28 14:31:15| Industrial Newsroom - All News for Today

Optimized for low forward voltage drop with moderate leakage, SD51 silicon power Schottky diodes feature continuous forward current of 60 A and repetitive peak reverse voltage of 45 V. These DO-5 stud-mount parts are primarily used in output stage of switching power supply in high-reliability commercial and industrial applications. Characteristics also include non-repetitive peak surge current of 800 A, forward voltage of 0.66 V, and -65°C to 150°C operating range. This story is related to the following:Silicon Diodes |

Tags: power applications suit silicon

 

NXP Introduces New 10 A High Efficiency Schottky Rectifiers In Compact Package For Smaller Charger Designs

2014-04-29 07:49:08| wirelessdesignonline News Articles

NXP Semiconductors N.V. (NASDAQ: NXPI), today introduced the first 10 A, 45 V Schottky barrier rectifiers PMEG45U10EPD and PMEG45A10EPD in the new CFP15 (SOT1289) package.

Tags: high package smaller designs

 

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