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15W, 28V, DC-6 GHz Power Transistor: T2G6001528-SG Datasheet

2015-09-01 16:22:08| rfglobalnet Downloads

The T2G6001528-SG is a 15W discrete GaN on SiC HEMT with an operating frequency in the DC – 6 GHz range, and an operating voltage of 28V. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of applications including military and civilian radar, radio communications, and test instrumentation.

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55W, 28V, DC-3.5 GHz Power Transistor: T2G4005528-FS Datasheet

2015-09-01 15:33:24| rfglobalnet Downloads

The T2G4005528-FS is a 55W discrete GaN on SiC HEMT with an operating frequency in the DC – 3.5 GHz range, and an operating voltage of 28V. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of applications including military and civilian radar, radio communications, and avionics.

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Richardson RFPD Introduces New 28V GaN-On-Si RF Power Amplifier From Nitronex

2013-10-29 05:16:54| rfglobalnet News Articles

Richardson RFPD, Inc. recently announces availability and full design support capabilities for a new 28V gallium nitride-on-silicon (GaN-on-Si) RF power amplifier from Nitronex.

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Richardson RFPD Introduces New 28V GaN-On-Si RF Power Amplifier From Nitronex

2013-10-29 05:16:54| wirelessdesignonline News Articles

Richardson RFPD, Inc. recently announces availability and full design support capabilities for a new 28V gallium nitride-on-silicon (GaN-on-Si) RF power amplifier from Nitronex.

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Saft awarded $6.5M contract for high-power 270V and 28V Li-ion aviation batteries for F-35

2013-07-22 20:30:18| Green Car Congress

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