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50V GaN HEMT for LTE: CGHV22100
2013-03-14 15:53:33| rfglobalnet Products
This GaN HEMT (gallium-nitride high electron mobility transistor) covers the 1.8-2.2 GHz frequency range. It features 20 dB Gain, -35 dBc ACLR (at 25 W PAVE), and 31-35% efficiency (at 25 W PAVE). A high degree of DPD (digital pre-distortion) correction can also be applied to this transistor.
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Category:Telecommunications
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