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Tag: hemt
Wolfspeed Releases New 28V 30W GaN HEMT Die
2016-04-29 04:40:09| rfglobalnet Home Page
Wolfspeed, A Cree Company and a leading global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs) with best-in-class reliability, released a new 28V, 30W GaN HEMT bare die at this year’s IEEE Wireless and Microwave Technology Conference (WAMICON), which took place April 11 – 13, 2016 in Clearwater Beach, Fla.
Richardson RFPD Introduces 111 GHz GaAs HEMT Low Noise Amplifier From ADI
2015-11-23 07:02:37| wirelessdesignonline News Articles
Richardson RFPD, Inc. announced recently the availability and full design support capabilities for a GaAs MMIC low-noise, wideband amplifier from Analog Devices, Inc.
Tags: low
noise
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introduces
GaN HEMT Devices handle TWT radar system issues.
2015-05-20 14:31:05| Industrial Newsroom - All News for Today
Offering pulsed saturated power performance greater than 400 W, Model CGHV59350 is used in ground-based defense and Doppler weather radar systems. C-Band device operates over 5.2–5.9 GHz bandwidth and exhibits 60% typ drain efficiency. Delivering 700 W of saturated RF pulsed power, Model CGHV31500F is suited for ATC radar systems. S-Band unit operates over 2.7–3.1GHz bandwidth and exhibits 12 dB power gain. Both 50 Ω, fully matched devices come in 0.7 x 0.9 in. ceramic/metal flange package.
Tags: system
issues
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devices
GaN on SiC HEMT Pulsed Power Transistors offer 650 W peak output.
2015-03-27 13:31:09| Industrial Newsroom - All News for Today
Available in standard flange or earless flange packaging, MAGX-000912-650L00 and MAGX-000912-650L0S are gallium nitride (GaN) on silicon carbide (SiC) HEMT pulsed power transistors intended for L-band pulsed avionics applications. These gold metalized, internally matched, GaN on SiC depletion mode RF power transistors operate over 960–1,215 MHz range and feature 600 year MTTF. Peak output power is 650 W with 20 dB typ gain and 62% drain efficiency.
MACOM Announces New 650 W GaN On SiC HEMT Pulsed Power Transistor
2015-03-24 06:43:30| wirelessdesignonline News Articles
M/A-COM Technology Solutions Inc. (“MACOM”), a leading supplier of high-performance analog RF, microwave and optical semiconductor products, today announced the new MAGX-000912-650L00 and MAGX-000912-650L0S, a 650 W gallium nitride (GaN) on silicon carbide (SiC) HEMT pulsed power transistor for L-band pulsed avionics applications.