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New Broadband GaN HEMT Device
2013-02-11 01:55:23| rfglobalnet News Articles
IGN0110UM100 is a dual-lead packaged gallium nitride (GaN) high electron mobility transistor (HEMT). This device is designed for Broadband applications operating over the 100MHz – 1GHz instantaneous frequency band. Under CW conditions it supplies a minimum of 100 watts of output power with 12dB gain.
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Category:Telecommunications
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