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TI reveals industry's first 80-V half-bridge GaN FET module

2015-03-13 05:44:06| Semiconductors - Topix.net

For more information, visit www.ti.com/lmg5200-pr. The new LMG5200 GaN FET power stage will help accelerate market adoption of next-generation GaN power-conversion solutions that provide increased power density and efficiency in space-constrained, high-frequency industrial and telecom applications.

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