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NWRA Urges President Trump to Suspend FET Through 2021

2020-07-30 09:00:00| Waste Age

Suspending the FET Will Spur Job Creation and Make Roads Safer

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FET Wins Grants

2017-10-12 15:05:00| Nonwovens Industry Breaking News

Funds will benefit advances in filtration and advanced composites

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FET Upgrades Process Development Lab

2016-09-14 17:00:00| Nonwovens Industry Breaking News

Lab now shows spinning series

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Revolutionize High-Performance Power Conversion With TI's 600-V GaN FET Power Stage

2016-04-26 08:57:41| rfglobalnet News Articles

Building on decades of power-management innovation, Texas Instruments (TI) (NASDAQ: TXN) today announced the availability of600-V gallium nitride (GaN) 70-mΩ field-effect transistor (FET) power-stage engineering samples, making TI the first and only semiconductor manufacturer to publicly offer a high-voltage driver-integrated GaN solution.

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Fully Qualified Low-R(on) 650 V GaN FET comes in TO-247 package.

2016-03-30 14:31:06| Industrial Newsroom - All News for Today

Available in TO-247 package that facilitates design and development, TPH3207WS GaN (gallium nitride) field effect transistor (FET) lets designers reduce overall power supply losses by as much as 40% while achieving up to 99% efficiency by implementing CCM bridgeless totem-pole PFC designs. On-resistance of 41 mΩ and Qrr of 175 nC help engineers improve system reliability, performance, and power density, and cascode configuration (EZ-GaN™) can be driven with off-the-shelf drivers.

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