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Gallium Nitride RF Devices for Harsh Military Environments
2015-06-23 14:42:38| rfglobalnet Downloads
Today’s advanced military systems – including phased array radar, communications systems and EW sensors – require high-frequency, high-bandwidth, high-power, high-efficiency devices. These applications are where GaN differentiates itself from other materials. GaN devices can operate at higher bias voltages, which provides several advantages at both the system/subsystem and circuit level, leading to a proportional decrease in current requirement for the circuit. The bottom line: GaN improves the system-level trade-off of size, weight, and power.
Tags: military
devices
environments
harsh
GaN Systems Showcases New High Power Gallium Nitride Power Transistor for First Time in China and Demonstrates Real Customer Applications at PCIM Asia
2015-06-17 12:31:10| Industrial Newsroom - All News for Today
New device expands broadest range of GaN devices on market: China important to growth as sales of GaN power transistors accelerate OTTAWA, Ontario GaN Systems, the leading developer of gallium nitride power switching semiconductors, is exhibiting at PCIM Asia, Shanghai from June 24 26 and is showcasing a new...
IDT And EPC Collaborate To Integrate Gallium Nitride And Silicon For Faster, Higher Efficiency Semiconductor Devices
2015-05-26 05:42:11| rfglobalnet Home Page
Integrated Device Technology, Inc. (IDT) recently announced its collaboration with Efficient Power Conversion (EPC) to develop technology based on Gallium nitride (GaN), a semiconductor material widely recognized for its speed and efficiency.
Tags: higher
devices
faster
efficiency
IDT And EPC Collaborate To Integrate Gallium Nitride And Silicon For Faster, Higher Efficiency Semiconductor Devices
2015-05-26 05:42:11| wirelessdesignonline News Articles
Integrated Device Technology, Inc. (IDT) recently announced its collaboration with Efficient Power Conversion (EPC) to develop technology based on Gallium nitride (GaN), a semiconductor material widely recognized for its speed and efficiency.
Tags: higher
devices
faster
efficiency
Freescale Introduces Its First Gallium Nitride RF Power Transistor For Cellular Base Stations
2015-05-21 03:41:54| rfglobalnet Home Page
Freescale Semiconductor (NYSE: FSL) today introduced its first gallium nitride (GaN) RF power transistor for cellular base stations.
Tags: power
base
stations
cellular
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