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Tag: nchannel
Toshiba launches 100V N-channel power MOSFETs in Compact package for 48V automotive applications
2019-12-26 11:55:44| Green Car Congress
Tags: power
applications
automotive
package
N-Channel MOSFET saves space in mobile devices.
2015-06-22 14:31:06| Industrial Newsroom - All News for Today
Housed in chipscale MICRO FOOT® 0.8 x 0.8 mm package with 0.357 mm profile, TrenchFET® 20 V Model Si8824EDB extends battery usage and saves space in smartphones, tablets, wearable devices, solid-state drives, and portable medical devices. Unit features extremely low on-resistance of 75 mΩ at 4.5 V, 82 mΩ at 2.5 V, 90 mΩ at 1.8 V, 125 mΩ at 1.5 V, and 175 mΩ at 1.2 V. To prevent static damage from handling or human body contact, MOSFET has 2,000 V integrated ESD protection.
Tags: mobile
space
devices
saves
N-Channel Power MOSFETs target automotive applications.
2015-06-16 14:31:05| Industrial Newsroom - All News for Today
Featuring chip that uses U-MOSVIII-H process in TO-220SM(W) package, Models TK160F10N1 and TK200F04N1L are 100 V/160 A and 40 V/200A MOSFETs, respectively. Devices achieve low on-resistance characteristics of RDS(ON) = 0.78 m (typical) at V(GS) = 10 V for TK200F04N1L and RDS(ON) = 2.0m (typical) at V(GS) = 10 V for TK160F10N1. With low thermal resistance of R(th(ch-c))=0.4°C/W max, both MOSFETs are suited for electric power steering, DC-DC converters, motor drivers, and load switches.
Tags: power
applications
automotive
target
N-Channel MOSFETs save energy in soft switching topologies.
2015-05-26 14:31:05| Industrial Newsroom - All News for Today
Built on superjunction technology, 600 Volt EF Series is suited for zero voltage switching/soft switching topologies such as phase-shifted bridges and LLC converter half bridges. Fast body diode N-channel power MOSFETs include 21 A Model SiHx21N60EF, 47 A Model SiHx47N60EF, and 70 A Model SiHx70N60EF with ultra-low on-resistance of 176 mΩ, 65 mΩ, and 38 mΩ, respectively. Low reverse recovery charge helps to avoid failure from shoot-through and thermal overstress.
Tags: save
energy
soft
switching
Vishay Intertechnology's New Fast Body Diode N-Channel MOSFETs...
2015-05-22 23:55:03| Semiconductors - Topix.net
With low reverse recovery charge and on-resistance, the Vishay Siliconix SiHx21N60EF, SiHx47N60EF, and SiHx70N60EF increase reliability and save energy in industrial, telecom, computing, and renewable energy applications. Built on second-generation superjunction technology, the 600 V fast body diode MOSFETs released today provide a complement to Vishay's existing standard E Series components, expanding the company's offering to devices that can be used in zero voltage switching /soft switching topologies such as phase-shifted bridges and LLC converter half bridges.