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Tag: nchannel
Dual N-Channel Power MOSFET features low on-resistance.
2014-03-31 14:31:25| Industrial Newsroom - All News for Today
Integrating 2 MOSFETs into one PowerPAK® SC-70 package with 2 x 2 mm footprint, halogen-free and RoHS-compliant SiA936EDJ helps conserve PCB space, simplify designs, and increase power efficiency in portable electronics. This dual n-channel TrenchFET® power MOSFET offers low on-resistance for 20 V (12 and 8 V VGS) devices at 4.5 and 2.5 V gate drives. On-resistance is 34 mΩ (4.5 V), 37 mΩ (3.7 V), and 45 mΩ (2.5 V), and built-in ESD protection is rated at 2,000 V. This story is related to the following:MOSFETs
Asymmetric Dual N-Channel MOSFET features low on-resistance.
2014-01-17 14:32:39| Industrial Newsroom - All News for Today
Housed in 3 x 3 mm PowerPAIR® package utilizing TrenchFET Gen IV technology, 30 V Siliconix SiZ340DT is optimized for synchronous buck designs in cloud computing infrastructures, servers, telecommunication equipment, and client-side electronic devices. Low-side Channel 2 MOSFET of SiZ340DT offers low on-resistance of 5.1 mΩ at 10 V gate drive and 7.0 mΩ at 4.5 V, while high-side Channel 1 MOSFET features on-resistance of 9.5 mΩ at 10 V and 13.7 mΩ at 4.5 V. This story is related to the following:MOSFET Transistors |
Tags: low
features
dual
asymmetric
Dual N-Channel Power MOSFETs suit automotive applications.
2013-12-13 14:28:09| Industrial Newsroom - All News for Today
Supplied in 5 x 6 mm asymmetric PowerPAK® SO-8L package, 40 V Siliconix SQJ940EP and SQJ942EP combine both high- and low-side MOSFETs required for synchronous DC/DC buck converters. At 10 V, Model SQJ940EP offers max on-resistance of 6.4 mΩ for Channel 2 low-side MOSFET and 16 mΩ for Channel 1 high-side MOSFET, while Model SQJ942EP offers max on-resistance of 11 mΩ for low-side MOSFET and 22 mΩ for high-side MOSFET. Both TrenchFET® devices are AEC-Q101-qualified and operate up to +175°C. This story is related to the following:MOSFETs |
Tags: power
applications
automotive
dual
N-Channel Power MOSFETs offer on-resistance down to 30 mOhm.
2013-05-24 14:36:19| Industrial Newsroom - All News for Today
Available in 8 different packages and 22 additional models, E Series offers extended on-resistance from 30–600 mΩ at 10 V and max current ratings from 6–105 A. RoHS-compliant, 650 V devices withstand high energy pulses in avalanche and commutation modes with guaranteed limits through 100% UIS testing. Based on Siliconix Super Junction Technology, MOSFETs are suited for switch mode applications, including PFC, server/telecom power systems, UPS systems, battery chargers, and LED lighting. This story is related to the following:MOSFETs
Tags: power
offer
mosfets
power mosfets
N-Channel Power MOSFET (100 V) offer optimized on-resistance.
2013-01-08 14:30:25| Industrial Newsroom - All News for Today
Respectively, SiB456DK and SiA416DJ TrenchFET® power MOSFETs come in thermally enhanced PowerPAK® SC-75 1.6 x 1.6 mm and PowerPAK SC-70 2 x 2 mm packages and offer on-resistance of less than 200 and 100 mΩ. Respective on-resistance times gate charge values for SiA416DJ are 540 mΩ-nC at 10 V and 455 mΩ-nC at 4.5 V, while values for SiB456DK are 611 mΩ-nC at 10 V and 558 mΩ-nC at 4.5 V. MOSFETs are optimized for boost converters, low-power DC/AC inverters, and primary side switching. This story is related to the following:MOSFETs
Tags: power
offer
optimized
mosfet