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Tag: nchannel
N-Channel 40/60 V MOSFETs reduce losses to increase efficiency.
2015-05-22 14:31:06| Industrial Newsroom - All News for Today
Breakdown voltage is 40 V for NTMFS5C404NLT, NTMFS5C410NLT, and NTMFS5C442NLT, which respectively have max RDS(on) values of 0.74, 0.9, and 2.8 mΩ and continuous drain current ratings of 352, 315, and 127 A. Breakdown voltage rating is 60 V for NTMFS5C604NL, NTMFS5C612NL and NTMFS5C646NL, which feature respective max RDS(on) values of 1.2, 1.5, and 4.7 mΩ and continuous drain currents of 287, 235, and 93 A. Gate capacitance, down to 2,164 pF, minimizes driver losses for all devices.
Tags: increase
reduce
efficiency
losses
ON Semiconductor Introduces A Comprehensive Array Of New Medium Voltage N-Channel MOSFETs
2015-05-22 03:49:03| electronicsweb Home Page
ON Semiconductor, driving energy efficiency innovations, has further expanded its broad portfolio of power MOSFETs with new, high efficiency single n-channel devices targeted at data networking, telecommunications and industrial applications
Tags: medium
comprehensive
array
voltage
X-REL Semiconductor Presents the XTR20410 and XTR20810 High-Temperature Families of N-channel Power MOSFET with Integrated Driver
2015-02-06 11:31:00| Industrial Newsroom - All News for Today
Grenoble, France, X-REL Semiconductor, the innovation leader in high-temperature and high-reliability semiconductors, unveils two new product families targeting power conversion applications in highly demanding markets including aerospace, industrial, hybrid and electric vehicles, transportation, geothermal and...
Tags: with
power
families
integrated
N-Channel Power MOSFETs achieve low resistance.
2015-01-22 14:31:53| Industrial Newsroom - All News for Today
Part of NexFET™ product line, 25 V Model CSD16570Q5B supports max Rdson of 0.59 mΩ, while 30 V Model CSD17570Q5B achieves max Rdson of 0.60 mΩ. Both are housed in 5 x 6 mm QFN package and are suitable for hot swap and ORing applications. For low-voltage battery-powered applications, 12 V Model CSD13383F4 comes in 0.6 x 1.0 mm FemtoFET™ package with Rdson of 44 mΩ at 4.5 V.
Tags: power
low
achieve
resistance
N-Channel MOSFETs suit soft switching topologies.
2014-12-08 14:30:39| Industrial Newsroom - All News for Today
Built on Super Junction Technology, 600 V Models SiHx28N60EF and SiHx33N60EF are suited for zero voltage switching/soft switching topologies such as phase-shift bridges and LLC converter half bridges. Minimized reverse recovery charge allows devices to regain ability to block full breakdown voltage quickly, helping to avoid failure from shoot-through and thermal overstress. Offered in 4 packages, 28 A SiHx28N60EF and 33 A SiHx33N60EF feature low on-resistance of 123 Ω and 98 Ω, respectively.
Tags: soft
suit
switching
topologies