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Scan System supports laser structuring of 6 in. solar wafers.

2014-01-02 14:29:55| Industrial Newsroom - All News for Today

Featuring 160 x 160 mm² scan field, g2T® Scan System is specifically designed for laser direct structuring with 532 nm single mode lasers. System converts Gaussian beams into homogenous top hat profiles, which provide high-precision grooves with smooth edges. It has closed optical core with integrated galvo mirrors and custom-made F-theta lens. Combination of concepts enables system to structure material at over 20 m/s while providing accuracy and process stability. This story is related to the following:Optics and PhotonicsGreen & CleanSearch for suppliers of: Semiconductor Lasers |

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High quality graphene wafers fabricated using beetle tech

2013-12-13 19:49:14| Extremetech

Researchers at the National University of Singapore have used a similar bubble trick to develop a way to make high quality graphene films. Their new technique is the first which can accomplish both the growth and transfer steps of graphene onto a silicon wafer.

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Beyond 7nm and silicon: The first III-V CMOS wafers roll off production lines

2013-11-05 18:19:47| Extremetech

Imec, perhaps the world's top semiconductor research center, has created the first monolithic III-V CMOS transistors on 300mm silicon wafers. With current silicon-based transistors hitting a wall at around 14nm, this accomplishment is probably the biggest step towards CMOS scaling down to 7nm and below.

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Imec Demonstrates World's First III-V FinFET Devices Monolithically Integrated On 300mm Silicon Wafers

2013-11-05 08:26:51| rfglobalnet News Articles

Imec, a leading nanoelectronics research center, announced today that it has successfully demonstrated the first III-V compound semiconductor FinFET devices integrated epitaxially on 300mm silicon wafers, through a unique silicon fin replacement process.

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Showa Denko to Launch 6" SiC Epitaxial Wafers for Power Devices

2013-09-30 06:00:00| Industrial Newsroom - All News for Today

To Contribute to Commercialization of Next-Generation Inverters<br /> <br /> Tokyo -- Showa Denko (SDK) (TOKYO: 4004) will next month launch silicon carbide (SiC) epitaxial wafers with a diameter of six inches (150mm) - the largest size currently available on the world market - for use in power devices. The company will also start selling next month a new grade of four-inch (100mm) SiC epitaxial wafers with fewer defects and higher uniformity.<br /> <br /> SDK has so far been producing and ...This story is related to the following:Silicon Wafers

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