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Power MOSFET serve high-current motor control and power designs.

2014-03-31 14:31:24| Industrial Newsroom - All News for Today

Supporting 40–100 V input, NexFETs™ include 14 power MOSFETs in TO-220 and lead (Pb)-free 5 x 6 mm SON packages. These 40, 60, 80, and 100 V N-channel devices, suited for high-current motor control and power applications, come in plastic packages with avalanche capability to support high-stress motor control applications. While CSD19506 supports 2.0 mΩ of Rds(on) at up to 80 V input, CSD19536 achieves 2.3 mΩ of Rds(on) at 100 V input. This story is related to the following:MOSFETs

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Smallest 60V Power MOSFET From Diodes Incorporated Boosts Power Density

2014-03-21 02:36:21| electronicsweb News Articles

Diodes Incorporated, a leading global manufacturer and supplier of high-quality application specific standard products within the broad discrete, logic and analog semiconductor markets, recently introduced the world’s smallest 60V N-channel power MOSFET with a sub-100mΩ on-resistance

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Off-Line PWM Controllers integrate power MOSFET.

2014-01-23 14:30:13| Industrial Newsroom - All News for Today

Available in DIP-8 and SOIC-8 packages, STR4A100 series incorporates sense MOSFET and current mode PWM controller IC. Products use secondary side regulation topology and make it possible to lower stand-by power to <10 mW. Low standby power is accomplished by automatic switching between PWM operation in normal operation and burst-oscillation under light load conditions. Suitable areas of use include appliance, office automation, consumer, and industrial markets. This story is related to the following:Electrical Equipment and Systems Sponsored by: Globtek Inc. - MOBILE BANNER ADSearch for suppliers of: MOSFETs | Pulse Width Modulator Circuits

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Power MOSFET features max on-resistance of 0.99 milliohm.

2013-12-10 14:32:27| Industrial Newsroom - All News for Today

Provided in PMPAK5x6 package with integrated thermal pad and standard SO-8 footprint compatible with other enhanced 5 x 6 mm power packages, AP1A003GMT-HF-3 is intended for use in high-current load switching where low voltage drop across MOSFET switch is required to minimize conduction losses. This RoHS-compliant and BFR-/halogen-free product features breakdown voltage rating of 30 V and max drain-source current rating of 260 A. This story is related to the following:MOSFETs

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P-Channel Gen III Power MOSFET measures 2.4 x 2.0 x 0.4 mm.

2013-12-05 14:30:05| Industrial Newsroom - All News for Today

Supplied in 30-pin CSP MICRO FOOT® package with 0.4 mm profile, Si8851EDB increases efficiency while conserving space in mobile computing devices. This -20 V TrenchFET® p-channel Gen III power MOSFET offers on-resistance of 8.0 and 11.0 m&Omega; at respective gate drive of -4.5 and -2.5 V. Optimized for load and battery switches in power management applications for tablets, smartphones, and notebooks, halogen-free and RoHS-compliant device also provides 6 kV typ ESD protection. This story is related to the following:MOSFETs

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