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Vishay Intertechnology's Si7655DN MOSFET Named as Top-10 Power Product by Electronic Products ...

2013-10-02 06:00:00| Industrial Newsroom - All News for Today

-20 V P-Channel Device Combines Industry-Low On-Resistance With New Ultra-Slim PowerPAK® 1212-8S Package<br /> <br /> MALVERN, Pa. &mdash; Vishay Intertechnology, Inc. (NYSE: VSH) today announced that its Si7655DN MOSFET was chosen as a winner in Electronic Products China magazine's Eleventh Annual Top-10 Power Product Awards. The Si7655DN is the industry's first -20 V p-channel MOSFET in a 3.3 mm by 3.3 mm package to offer on-resistance of just 4.8 m&Omega; maximum at a 4.5 V gate drive, and ...This story is related to the following:MOSFETs

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Power MOSFET offers on-resistance down to 18 mOhm.

2013-04-23 14:31:50| Industrial Newsroom - All News for Today

Housed in thermally enhanced PowerPAK® SO-8 package, Model SiR872ADP extends ThunderFET® technology to 150 V. Device offers low on-resistance of 18 m&Omega; at 10 V and 23 m&Omega; at 7.5 V while maintaining low gate charge of 31 nC at 10 V and 22.8 nC at 7.5 V. N-channel TrenchFET® power MOSFET is optimized for primary-side switching and secondary-side synchronous rectification in DC/DC converters, DC/AC inverters, and boost converters for telecom bricks, solar micro-inverters, and brushless DC motors. This story is related to the following:MOSFETs

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N-Channel Power MOSFET (100 V) offer optimized on-resistance.

2013-01-08 14:30:25| Industrial Newsroom - All News for Today

Respectively, SiB456DK and SiA416DJ TrenchFET® power MOSFETs come in thermally enhanced PowerPAK® SC-75 1.6 x 1.6 mm and PowerPAK SC-70 2 x 2 mm packages and offer on-resistance of less than 200 and 100 m&Omega;. Respective on-resistance times gate charge values for SiA416DJ are 540 m&Omega;-nC at 10 V and 455 m&Omega;-nC at 4.5 V, while values for SiB456DK are 611 m&Omega;-nC at 10 V and 558 m&Omega;-nC at 4.5 V. MOSFETs are optimized for boost converters, low-power DC/AC inverters, and primary side switching. This story is related to the following:MOSFETs

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