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RFMD Introduces 500 Watt GaN L-Band Amplifier
2013-06-10 04:07:35| wirelessdesignonline News Articles
RF Micro Devices, Inc. (Nasdaq:RFMD), a global leader in the design and manufacture of high-performance radio frequency solutions, today introduced the RFHA1027, a gallium nitride (GaN) matched power transistor (MPT) that will deliver industry-leading pulse power performance of 500W in a compact flanged package at L-Band.
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Toshiba Adds High Gain 200W GaN HEMT Power Amplifier For C-Band Radar Applications
2013-06-07 10:20:04| rfglobalnet News Articles
Toshiba America Electronic Components, Inc. (TAEC)*, a committed leader that collaborates with technology companies to create breakthrough designs, and its parent company, Toshiba Corp., recently announced the addition of a 200W C-Band gallium nitride (GaN) semiconductor High Electron Mobility Transistor (HEMT) to its power amplifier product family.
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power
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Power Transistor leverages gallium nitride (GaN) technology.
2013-06-06 14:29:25| Industrial Newsroom - All News for Today
Fully qualified NPT1015 is 28 V, DC–2.5 GHz, 50 W power transistor with 15 dB saturated gain, 65% peak drain efficiency at 2 GHz, and thermal resistance is 1.9°C/W. During VSWR testing, all devices operated in saturated average power condition driven by 4,000 carrier 200 MHz wideband signal with 19.5 dB peak-to-average ratio. The devices showed 100% survivability and ~0.2 dB average change in saturated output power. SIGANTIC® GaN-on-Si process uses 4 in. silicon substrate. This story is related to the following:Power Transistors
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technology
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Reduce Size, Reduce Weight, And Improve Performance? GaN Do.
2013-06-04 18:56:55| rfglobalnet News Articles
Paul Beasly with M/A-COM Technology Solutions gives us an overview of their high power GaN in space-saving plastic power transistors. These transistors are ideal for applications involving surveillance, air traffic control, marine radar, SATCOM, weather systems and more.
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size
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Toshiba Adds High Gain 200W GaN HEMT Power Amplifier for C-Band RADAR Applications
2013-06-04 06:00:00| Industrial Newsroom - All News for Today
Offer High Power, Gain and Efficiency to Enhance Weather RADAR Performance<br /> <br /> SEATTLE - 2013 INTERNATIONAL MICROWAVE SYMPOSIUM, Booth #2027, -Toshiba America Electronic Components, Inc. (TAEC)*, a committed leader that collaborates with technology companies to create breakthrough designs, and its parent company, Toshiba Corp., today announced the addition of a 200W C-Band gallium nitride (GaN) semiconductor High Electron Mobility Transistor (HEMT) to its power amplifier product ...This story is related to the following:Power Transistors | Power Amplifiers
Tags: high
power
applications
gain
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