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Tag: sic power
SiC Power MOSFETs feature no tail current.
2013-09-27 14:32:04| Industrial Newsroom - All News for Today
Rated at 80 mΩ and 1,200 V, Models SCT2080KE and SCH2080KE are intended for solar inverters, DC-DC converters, UPS, and motor drive applications. Absence of tail current and fast recovery characteristics lower switching losses, while 70–90 ns turn ON/OFF times allow for switching frequencies in hundreds of kHz range. Model SCH2080KE, co-packaged with discrete anti-parallel SiC Schottky Barrier Diode, features forward voltage 3 times smaller than that of body diode. This story is related to the following:MOSFETs
Tags: current
power
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Microsemi 750 Watt GaN On SiC RF Power Transistor Delivers Unparalleled High-power Performance For Aviation Applications
2013-09-20 06:39:56| rfglobalnet News Articles
Microsemi Corporation(Nasdaq: MSCC),a leading provider of semiconductor solutions differentiated by power, security, reliability and performance, today expanded its family of radio frequency (RF) power transistors based on gallium nitride (GaN) high electron mobility transistor (HEMT) on silicon carbide (SiC) technology with a new 750 watt (W) RF transistor.
Tags: power
performance
applications
delivers
MACOM's New 600 W GaN On SiC Pulsed Power Transistor Delivers Industry's Highest Reliability Rating And Lowest Pulse Droop
2013-09-20 04:15:38| rfglobalnet News Articles
M/A-COM Technology Solutions Inc. (“MACOM”), a leading supplier of high-performance RF, microwave and millimeter wave products, recently announced a new ceramic GaN on SiC HEMT Power Transistor for avionics applications.
Tags: power
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lowest
MACOM's New 600 W GaN On SiC Pulsed Power Transistor Delivers Industry's Highest Reliability Rating And Lowest Pulse Droop
2013-09-20 04:15:38| wirelessdesignonline News Articles
M/A-COM Technology Solutions Inc. (“MACOM”), a leading supplier of high-performance RF, microwave and millimeter wave products, recently announced a new ceramic GaN on SiC HEMT Power Transistor for avionics applications.
Tags: power
rating
highest
lowest
GaN on SiC RF Power Transistor delivers 750 W peak power.
2013-09-19 14:31:47| Industrial Newsroom - All News for Today
Intended for air traffic control and collision avoidance equipment, MDSGN-750ELMV is based on gallium nitride (GaN) high electron mobility transistor (HEMT) on silicon carbide (SiC) technology. Solution delivers 750 W of peak power with 17 dB power gain and 70% typ drain efficiency when operating at 1,030/1,090 MHz. Transistor handles commercial Mode-S ELM (Extended Length Message) pulsing conditions for 1,030 MHz ground based interrogators and 1,090 MHz airborne transponders. This story is related to the following:RF Transistors |