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Ampleon Introduces GaN RF Power Transistors In 10 To 200W Ratings

2015-12-18 06:09:34| rfglobalnet Home Page

Ampleon recently announced the extension of its portfolio of GaN RF power transistors based on a 0.5um HEMT process technology.

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Qorvo's New Plastic GaN RF Transistors Make X-Band Radar More Affordable

2015-10-02 07:22:00| wirelessdesignonline News Articles

Qorvo™, Inc., a leading provider of RF solutions for mobile, infrastructure and aerospace/defense applications, recently announced three new GaN RF transistors in low-cost plastic packages designed to enable smaller size and greater reliability in civilian marine, airborne and infrastructure radar systems.

Tags: make plastic affordable radar

 
 

GaN RF Input-Matched Transistors: TGF3021-SM Datasheet

2015-09-24 18:32:51| rfglobalnet Downloads

The TGF3021-SM is a wideband 32 V RF transistor operating in the 0.03 to 4.0 GHz frequency range. These devices have an integrated matching network that allows for wideband gain and power performance, while the output is simultaneously matched to optimize power and efficiency for any region within the band.

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GaN RF Input-Matched Transistors: TGF3020-SM Datasheet

2015-09-24 18:27:05| rfglobalnet Downloads

The TGF3020-SM is a wideband 32 V RF transistor operating in the 4.0 to 6.0 GHz frequency range. These devices have an integrated matching network that allows for wideband gain and power performance, while the output is simultaneously matched to optimize power and efficiency for any region within the band.

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GaN RF Input-Matched Transistors: TGF3015-SM Datasheet

2015-09-24 18:23:29| rfglobalnet Downloads

The TGF3015-SM is a wideband 32 V RF transistor operating in the 30 MHz to 3.0 GHz frequency range. These devices have an integrated matching network that allows for wideband gain and power performance, while the output is simultaneously matched to optimize power and efficiency for any region within the band.

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