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Cree Introduces Highest Power And Frequency Plastic Packaged GaN Transistors For Low Cost Radar And Datalinks
2014-05-16 13:01:18| electronicsweb Home Page
Cree, Inc. introduces the industry’s highest power continuous wave (CW) GaN HEMT RF transistors packaged in a dual-flat no-leads (DFN) format
Cree Announces Low Cost Extended Bandwidth GaN HEMT Transistors To Support Data-Hungry Small Cell Networks
2014-05-09 07:29:41| rfglobalnet News Articles
As high data rate applications put more strain on LTE wireless networks, innovative solutions such as small cell base stations (BTS) and carrier aggregation will be needed to bridge the bandwidth gap in high traffic areas
Cree Announces Low Cost Extended Bandwidth GaN HEMT Transistors To Support Data-Hungry Small Cell Networks
2014-05-09 07:29:41| wirelessdesignonline News Articles
As high data rate applications put more strain on LTE wireless networks, innovative solutions such as small cell base stations (BTS) and carrier aggregation will be needed to bridge the bandwidth gap in high traffic areas.