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Normally-Off 650 V GaN Transistors aid high-speed system design.
2014-05-30 14:31:06| Industrial Newsroom - All News for Today
Normally-off 650 V GaN transistors GS66502P, GS66504P, GS66506P, and GS66508P are, respectively, 8.5 A/165 mΩ, 17 A/82 mΩ, 25 A/55 mΩ, and 34 A/41 mΩ parts. Also available, GS43106L is 30 A/60 mΩ cascode. Reverse current capability, zero reverse recovery charge, and source-sense optimize high-speed design. These RoHS-compliant devices come in near chipscale, embedded GaNPX package that optimizes thermal performance as well as eliminates wire bonds and thereby minimizes inductance. This story is related to the following:Gallium Nitride (GaN) Transistors |
Cree Introduces New Low Cost, High Power GaN RF Transistors To Enable Higher Data Rate Telecom Systems
2014-05-30 12:47:48| rfglobalnet Home Page
Cree, Inc. introduces a new family of high power GaN RF transistors based on an innovative plastic package design, which leverages the superior RF performance of GaN in a low-cost platform.
Cree Introduces New Low Cost, High Power GaN RF Transistors To Enable Higher Data Rate Telecom Systems
2014-05-30 12:47:48| electronicsweb Home Page
Cree, Inc. introduces a new family of high power GaN RF transistors based on an innovative plastic package design, which leverages the superior RF performance of GaN in a low-cost platform.
IEEE Power Electronics Society (PELS) Webinar, 'GaN Transistors Crushing Silicon In Wireless Energy Transfer'
2014-05-23 07:51:04| electronicsweb Home Page
Efficient Power Conversion Corporation (EPC) experts on the design and use of gallium nitride transistors will conduct a one-hour webinar sponsored by the IEEE Power Electronics Society (PELS) on June 4th from 10:30 AM to 11:30 AM (EDT). In this webinar eGaN FETs are compared with MOSFETs in highly resonant wireless energy transfer using class-E, and a novel high efficiency voltage-mode class-D topology
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Cree Introduces Highest Power And Frequency Plastic Packaged GaN Transistors For Low Cost Radar And Datalinks
2014-05-16 13:01:18| rfglobalnet Home Page
Cree, Inc. introduces the industry’s highest power continuous wave (CW) GaN HEMT RF transistors packaged in a dual-flat no-leads (DFN) format. Aimed at the cost-sensitive sub-100W commercial radar and data link amplifier market segments, the new 6- and 25-watt DFN transistors effectively obsolete the use of inefficient GaAs transistors in C- and X-Band frequencies and also enable the practical replacement of short life tube-based technology for commercial radar applications such as weather, marine and surveillance.