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High Accuracy Current Sensing, Ultra-Low RDSON Load Switch Rich With Programmable Features

2014-12-19 03:57:07| electronicsweb Home Page

Silego Technology introduces CurrentPAK, a new family of configurable mixed-signal IC, or CMIC. A high performance load switch including efficient, high accuracy current measurement, CurrentPAK is also the world’s first load switch to have advanced programmable features

Tags: high current features rich

 

P-Channel Power MOSFET offers low RDS(ON) values.

2014-05-01 14:30:19| Industrial Newsroom - All News for Today

Supplied in 2 x 2 mm PowerPAK® SC-70 package, SiA453EDJ p-channel TrenchFET® power MOSFET conserves space and increases power efficiency in portable electronics. RoHS-compliant and halogen-free product, 100% Rg and UIS tested, offers on-resistance of 18.5 m&Omega; (-10 V), 23.5 m&Omega; (-4.5 V), 26.0 m&Omega; (-3.7 V), and 37.7 m&Omega; (-2.5 V) as well as 4,000 V built-in ESD protection. While -30 V VDS provides headroom needed for over-voltage spikes, 12 V VGS enables on-resistance ratings of -3.7 and -2.5 V.<br /> This story is related to the following:MOSFETs

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Automotive Power MOSFETs offer RDS(on) down to 8.9 mOhm.

2014-03-06 14:30:54| Industrial Newsroom - All News for Today

With continuous drain currents to 50 A, 100 V n-channel SQJ402EP, SQJ488EP, and SQD50N10-8m9L are optimized for injector boost applications in automotive engine control units. Model SQD50N10-8m9L in DPAK package provides on-resistance down to 8.9 m&Omega; at 10 V, while Models SQJ402EP and SQJ488EP, housed in 5 x 6 mm PowerPAK SO-8L package, offer values down to 11 m&Omega; and 21 m&Omega; at 10 V, respectively. All AEC-Q101-qualifed TrenchFET® power MOSFETs with ThunderFET® technology operate from -55 to +175°C. This story is related to the following:MOSFETs |

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P-Channel MOSFETs offer industry-low RDS(on).

2013-11-21 17:08:28| Industrial Newsroom - All News for Today

In applications where saving PCB space is critical, -12 V Model Si5411EDU offers low on-resistance of 8.2 m&Omega; (-4.5 V) and 11.7 m&Omega; (-2.5 V) in 3.0 x 1.9 mm PowerPAK ChipFET package. When higher voltage rating is needed, -20 V Model Si5415AEDU features values of 9.6 m&Omega; (-4.5 V) and 13.2 m&Omega; (-2.5 V). Both provide 5,000 V ESD protection. Model SiSS23DN, housed in 3.3 x 3.3 mm PowerPAK 1212-8S package, provides 4.5 m&Omega; (-4.5 V) and 6.3 m&Omega; (-2.5 V) for applications requiring low on-resistance. This story is related to the following:MOSFETs |

Tags: offer mosfets rdson pchannel

 

Toshiba Introduces Low RDS(ON) P-ch MOSFETs for Mobile Devices

2013-05-23 17:34:44| MobileTechNews

This new power component from Toshiba promises higher efficiency battery charging in future mobile devices.

Tags: low mobile devices toshiba

 

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