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High Current Implanter delivers precise dopant placement.

2013-12-10 14:32:28| Industrial Newsroom - All News for Today

Supporting manufacture of sub 16 nm planar and 3-D devices, Purion H Single Wafer Implanter features scanned spot beam technology with precision implant angle and dose control to optimize device performance and yield. Process control technology minimizes all forms of contaminants to ensure absolute beam purity. Cross-platform architecture is designed to drive manufacturing flexibility and lower total cost of fab operations. This story is related to the following:Laboratory and Research Supplies and EquipmentSearch for suppliers of: Ion Implanters

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