Home › Pulsed RF Power Semiconductor Device Markets Will Exceed $US300M By 2019 With Gallium Nitride Driving Growth, Says ABI Research
 

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Pulsed RF Power Semiconductor Device Markets Will Exceed $US300M By 2019 With Gallium Nitride Driving Growth, Says ABI Research

2014-09-23 10:21:05| rfglobalnet News Articles

Markets for pulsed RF power devices up to 18 GHz are expected to show continued growth over the next 5 years despite the current economic turmoil and cuts in defense spending. While their association with consumer spending fuels the volatility of many global electronics markets, pulsed RF power devices are supported by quite different priorities.

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