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Cree SiC MOSFETs Revolutionize Shinry Hybrid Electric and Electric Vehicle Power Converters, ...
2013-10-31 06:00:00| Industrial Newsroom - All News for Today
Shinry and Cree Raise the Bar for State-of-the-Art Electric Vehicle Power Converters<br /> <br /> DURHAM, N.C. – Cree, Inc. (Nasdaq: CREE) announces that Shinry Technologies, a premier high-tech enterprise focused on energy efficient applications in transportation and lighting, employed Cree's 1200V C2M family of SiC MOSFETs in its new, high-efficiency, hybrid electric and electric vehicle (HEV/EV) power converters to achieve industry-leading 96 percent efficiency. According to Shinry ...This story is related to the following:Green & CleanSearch for suppliers of:
Tags: power
electric
vehicle
hybrid
Richardson RFPD Introduces Two New RF Power Vertical MOSFETs From Microsemi
2013-10-23 04:24:03| rfglobalnet News Articles
Richardson RFPD, Inc. recently announces availability and full design support capabilities for two new high-frequency vertical diffusion metal oxide semiconductor (VDMOS) MOSFETs from Microsemi Corporation (Microsemi).
Tags: power
vertical
introduces
richardson
SiC Power MOSFETs feature no tail current.
2013-09-27 14:32:04| Industrial Newsroom - All News for Today
Rated at 80 mΩ and 1,200 V, Models SCT2080KE and SCH2080KE are intended for solar inverters, DC-DC converters, UPS, and motor drive applications. Absence of tail current and fast recovery characteristics lower switching losses, while 70–90 ns turn ON/OFF times allow for switching frequencies in hundreds of kHz range. Model SCH2080KE, co-packaged with discrete anti-parallel SiC Schottky Barrier Diode, features forward voltage 3 times smaller than that of body diode. This story is related to the following:MOSFETs
Tags: current
power
feature
tail
NXP NextPowerS3 MOSFETs Offer Super-Fast Switching With Soft Recovery
2013-09-20 06:13:35| electronicsweb News Articles
NXP Semiconductors N.V. (NASDAQ: NXPI) today announced the release of NextPowerS3, a new high-performance 30V MOSFET platform incorporating the company’s unique “SchottkyPlus” technology.NextPowerS3is the industry’s first MOSFET to deliver the high frequency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current
Tags: offer
soft
recovery
switching
Vishay Releases -12 V, -20 V, and -30 V Gen III P-Channel MOSFETs
2013-09-15 03:49:01| Semiconductors - Topix.net
According to a release, designed to save space and increase power efficiency in portable electronics, the Vishay Siliconix MOSFETs released offer a low on-resistance for -12 V, -20 V, and -30 V devices at -4.5 V and -10 V gate drives in the 2 mm by 2 mm footprint area.
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