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Cree SiC MOSFETs Enable Next-Generation Solar Inverters from Delta Energy Systems
2013-04-01 06:00:00| Industrial Newsroom - All News for Today
SiC MOSFET technology can significantly improve weight, cost and efficiency in PV inverters<br /> <br /> DURHAM, N.C. – Cree, Inc. (Nasdaq: CREE) and Delta Energy Systems announce a breakthrough in the photovoltaic (PV) inverter industry with the release of Delta's new generation of solar inverters, which utilize SiC power MOSFETs from Cree. The use of SiC MOSFETs in the next-generation PV inverters can enable significant new milestones in power density, efficiency and weight. <br ...This story is related to the following:Electrical Equipment and Systems Sponsored by: Globtek Inc. - Your Power Partner...For Over 20 Years!Photovoltaic Components | Power Inverters | Alternative Energy Inverters | Solar Energy Electric Generation Equipment |
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Power MOSFETs offer on-resistance down to 20 mOhm at 4.5 V.
2013-01-16 14:28:54| Industrial Newsroom - All News for Today
Housed in 1.6 x 1.6 x 0.6 mm CSP MICRO FOOT® package, 8 V n-channel Si8424CDB and -20 V p-channel Si8425DB offer maximum on-resistance of 20 mΩ and 23 mΩ, respectively, at 4.5 V gate drive. Smaller 8 V n-channel Si8466EDB, measuring 1 x 1 x 0.55 mm, features max on-resistance of 43 mΩ at 4.5 V and provides 3,000 V typical ESD protection. RoHS-compliant and halogen-free, TrenchFET® power MOSFETs are suited for battery or load switching in power management applications for portable electronics. This story is related to the following:MOSFETs | Field Effect Transistors (FET)