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Tag: mosfets
Super Junction MOSFETs delivers high-speed switching.
2014-03-27 13:31:14| Industrial Newsroom - All News for Today
Supplied in TO-247 package, models TK31N60X, TK39N60X, and TK62N60X of DTMOS IV-H series use single epitaxial process and achieve high speed switching performance while maintaining low ON-resistance level (0.088, 0.065, and 0.040 max R<sub><font size="2">DS(ON)</font></sub>) – all without loss of power. This is accomplished via reduction of parasitic capacitance between Gate and Drain, which also promotes power efficiency. Max V<sub><font size="2">DSS</font></sub> value is 600 V for all models, and respective max I<sub><font size="2">D</font></sub> values are 30.8, 38.8, and 61.8 A.<br /> This story is related to the following:Electronic Components and Devices Sponsored by: Globtek Inc. - Your Power Partner...For Over 20 Years!Search for suppliers of: MOSFETs
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Vishay Intertechnology to Feature Industry-Leading MOSFETs, Passive Components, Diodes, and ...
2014-03-11 05:00:00| Industrial Newsroom - All News for Today
MALVERN, Pa. – Vishay Intertechnology, Inc. (NYSE: VSH) today announced its technology lineup for the Applied Power Electronics Conference and Exposition (APEC) 2014, taking place March 16-20 in Fort Worth, Texas. In booth 921, the company will be highlighting its latest industry-leading power MOSFET, passive component, diode, and power IC technologies for a wide range of applications.<br /> <br /> Vishay Siliconix power MOSFET technologies on display at APEC 2014 will include TrenchFET® ...This story is related to the following:Computer Hardware and PeripheralsGreen & CleanSearch for suppliers of: Thick Film Resistors | Fusible Resistors | Digital Signal Processors (DSP) | Inductors | Application Specific Integrated Circuits (ASIC) | Aluminum Electrolytic Capacitors |
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components
passive
diodes
Automotive Power MOSFETs offer RDS(on) down to 8.9 mOhm.
2014-03-06 14:30:54| Industrial Newsroom - All News for Today
With continuous drain currents to 50 A, 100 V n-channel SQJ402EP, SQJ488EP, and SQD50N10-8m9L are optimized for injector boost applications in automotive engine control units. Model SQD50N10-8m9L in DPAK package provides on-resistance down to 8.9 mΩ at 10 V, while Models SQJ402EP and SQJ488EP, housed in 5 x 6 mm PowerPAK SO-8L package, offer values down to 11 mΩ and 21 mΩ at 10 V, respectively. All AEC-Q101-qualifed TrenchFET® power MOSFETs with ThunderFET® technology operate from -55 to +175°C. This story is related to the following:MOSFETs |
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automotive
mosfets
Power MOSFETs feature very low on-resistance.
2014-02-27 14:31:30| Industrial Newsroom - All News for Today
Available in TO-263 and TO-220 packages, respectively, Models AP99T03GS-HF-3 and AP99T03GP-HF-3 feature low on-resistance of 2.5 mΩ, drain-source breakdown voltage of 30 V, and continuous drain current of 120 A. Model AP99T03GS-HF-3 is suited for commercial and industrial surface-mount applications, while Model AP99T03GP-HF-3 is intended for applications where small PCB footprint or attached heatsink is required. Both N-channel MOSFETs are halogen-free and RoHS-compliant. This story is related to the following:MOSFETs
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low
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mosfets
Vishay Intertechnology to Highlight Latest MOSFETs, Passives, Diodes, and Optoelectronics at ...
2014-01-06 06:00:00| Industrial Newsroom - All News for Today
MALVERN, Pa. — Vishay Intertechnology, Inc. (NYSE: VSH) today announced its technology line-up for ELECRAMA-2014, taking place Jan. 8-12 at the Bangalore International Exhibition Center in India. In hall 3B, booth H3J12, the company will be highlighting its latest industry-leading power MOSFET, passive component, diode, and optoelectronics technologies for solar, smart grid, wind turbine, and railroad applications.<br /> <br /> Vishay Siliconix power MOSFET technologies on display at ...This story is related to the following:Optics and PhotonicsSearch for suppliers of: Wirewound Resistors | Thick Film Resistors | Braking Resistors | MOSFETs |
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latest
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diodes
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