je.st
news
Tag: mosfets
Opto-Isolated Fast Gate Driver IC works with power MOSFETs, IGBTs.
2014-12-19 14:31:14| Industrial Newsroom - All News for Today
Supplied in 8-lead DIP and 8-lead SOIC package options, IX3180 serves applications requiring isolated drivers for fast switching power MOSFETs and IGBTs. Optocoupler input consists of LED optically coupled to IC containing photodiode and push-pull power output, and output is capable of providing 2.5 A peak drive current. Specified from -40 to +100°C, product has 10–20 V supply range, 100 nS typ propagation delay, and 20 nS typ pulse width distortion. UVLO with hysteresis is also included.
N-Channel MOSFETs suit soft switching topologies.
2014-12-08 14:30:39| Industrial Newsroom - All News for Today
Built on Super Junction Technology, 600 V Models SiHx28N60EF and SiHx33N60EF are suited for zero voltage switching/soft switching topologies such as phase-shift bridges and LLC converter half bridges. Minimized reverse recovery charge allows devices to regain ability to block full breakdown voltage quickly, helping to avoid failure from shoot-through and thermal overstress. Offered in 4 packages, 28 A SiHx28N60EF and 33 A SiHx33N60EF feature low on-resistance of 123 Ω and 98 Ω, respectively.
Tags: soft
suit
switching
topologies
MOSFETs (500 V) offer low conduction and switching losses.
2014-09-26 14:31:06| Industrial Newsroom - All News for Today
Built on second-generation Super Junction Technology, Vishay Siliconix SiHx25N50E MOSFETs comprise 25 A, RoHS-compliant devices that offer gate charge of 57 nC and 145 mΩ on-resistance. These values promote energy conservation in high-power, high-performance consumer products, lighting applications, and ATX/silver box PC SMPSs. Package options include TO-220, TO-247AC, and thin leaded TO-220 FULLPAK. Products withstand high energy pulses in avalanche and commutation modes.<br /> This story is related to the following:Green & CleanMOSFETs |
Tags: low
offer
losses
switching
Low-Profile Photocouplers drive IGBTs and power MOSFETs.
2014-09-10 14:31:04| Industrial Newsroom - All News for Today
Comprised of GaAlAs infrared LED and integrated high-gain, high-speed photodetector, Model TLP5751 offers peak output current of +1.0 A and can drive power MOSFETs and low-power IGBTs up to 20 A, while +2.5 A Model TLP5752 and +4.0 A Model TLP5754 will drive power MOSFETs and IGBTs with current ratings to 80 A and 100 A, respectively. Rail-to-rail output devices operate from -40 to +110°C with power supply voltage from 15–30 V and max supply current of 3.0 mA. This story is related to the following:Optics and PhotonicsSearch for suppliers of: Photocouplers
Tags: power
drive
mosfets
drive power
Cree SiC MOSFETs Help Power Japans Growing Solar Energy Infrastructure
2014-09-08 06:00:00| Industrial Newsroom - All News for Today
Sanix Incorporated selected Crees C2M silicon carbide MOSFETs for use in their latest solar inverters to achieve the best combination of system performance, reliability and pricing<br /> <br /> DURHAM, N.C. – Cree, Inc. (Nasdaq: CREE) has announced that its C2M, 1200V, 80mOhm SiC MOSFETs have been selected by Sanix Corporation, Japan, to be designed into their new 9.9kW three-phase solar inverters for use in the construction of commercial photovoltaic systems in the fast-growing Japanese ...This story is related to the following:Green & CleanSearch for suppliers of: MOSFET Transistors
Tags: power
energy
growing
infrastructure
Sites : [1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] [13] [14] [15] [16] next »