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GaN On SiC Advantage: Interview With Doug Reep, Sr. Director Of Research
2016-01-08 08:51:58| wirelessdesignonline Downloads
Video interview with Qorvo’s Director of Research as he discusses the advantages of GaN on SiC.
Tags: research
director
advantage
interview
SiC Power Module supports high-power applications.
2015-12-03 14:31:07| Industrial Newsroom - All News for Today
Integrating SiC SBD and SiC-MOSFET into single package, 1,200 V/300 A Model BSM300D12P2E001 is designed for inverters and converters in solar power conditioners and industrial equipment. Device features optimized chip layout and module construction that minimizes internal inductance, suppressing surge voltage while supporting operation up to 300 A. Switching loss is 77% lower than conventional IGBT modules, enabling high-frequency operation and smaller cooling systems.
Tags: power
applications
supports
module
10.01.15 -- World-First Trial Of Self-Interference Cancellation (SIC) Tech Completed
2015-09-30 02:33:55| rfglobalnet News Articles
10/01/15RF Globalnet Newsletter
Tags: tech
completed
trial
sic
Uninterruptible Power System incorporates SiC semiconductors.
2015-09-15 14:31:07| Industrial Newsroom - All News for Today
Replacing IGBTs with silicon carbide semiconductors for higher switching frequencies, lower switching losses, and thermal conductivity, SUMMIT Series is designed for data centers and other demanding, mission-critical applications. Three-phase, on-line, double-conversion system supplies clean, continuous power to systems sensitive to fluctuations common in utility power. Device provides 500 kVA with efficiencies greater than 98% at 50% load and max efficiency of 98.2%.
Tags: system
power
sic
incorporates
GaN on SiC Power Transistors
2015-07-29 13:06:12| rfglobalnet Products
Qorvo offers a large range of GaN on SiC power transistors as premiere solutions for GaN needs. These discrete power amplifiers are available in models that cover frequency ranges from DC-18 GHz. With a range of linear gain between 16.6 – 21 dB, and a saturated output power range between 37 and 54.2 dBm, these devices are ideal for a wide variety of broadband wireless, space, and military applications.
Tags: power
sic
gan
transistors
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