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Powerex SiC Modules Attain RoHS Compliance
2014-02-20 06:00:00| Industrial Newsroom - All News for Today
Product Description –<br /> <br /> Several Powerex SiC Modules have now been certified RoHS (Restriction of Use of Hazardous Substances) compliant:<br /> <br /> QJD1210010 and QJD1210011, Split Dual SiC MOSFET Modules<br /> QID1210005 and QID1210006, Split Dual Si/SiC Hybrid IGBT Modules<br /> <br /> RoHS regulations ban new electrical or electronic equipment containing more than agreed upon levels of specific substances, including lead, cadmium, polybrominated biphenyl (PBB), mercury, ...This story is related to the following:IGBT Modules |
Tags: modules
compliance
sic
attain
MACOM Announces High Efficiency 500 W GaN On SiC HEMT Pulsed Power Transistor For Avionics Applications
2014-02-07 05:25:25| rfglobalnet News Articles
M/A-COM Technology Solutions Inc. (“MACOM”), a leading supplier of high performance RF, microwave, and millimeter wave products, recently announced a new GaN on SiC HEMT Power Transistor for L-Band pulsed radar applications.
Tags: high
power
applications
efficiency
650V SiC Diodes from STMicroelectronics Offer Unique Dual...
2014-01-14 15:04:25| Electronics - Topix.net
ENP Newswire - 14 January 2014 Release date- 13012014 - Geneva -New dual-configuration Schottky silicon-carbide diodes from STMicroelectronics are the first such devices in the industry with a voltage rating of 650V per diode in a choice of common-cathode or series configurations allowing use in interleaved or bridgeless power-factor correction ... (more)
650V SiC Diodes from STMicroelectronics Offer Unique Dual...
2014-01-14 14:46:07| Semiconductors - Topix.net
ENP Newswire - 14 January 2014 Release date- 13012014 - Geneva -New dual-configuration Schottky silicon-carbide diodes from STMicroelectronics are the first such devices in the industry with a voltage rating of 650V per diode in a choice of common-cathode or series configurations allowing use in interleaved or bridgeless power-factor correction ... (more)
Isolated Gate Driver targets SiC and Si power switches.
2014-01-13 14:29:46| Industrial Newsroom - All News for Today
With high temperature capability up to 225°C, HADES® Gen2 Chipset can be located next to power switches, minimizing parasitic inductances and their negative impact on efficiency. Increased switching frequencies translate into reduction of size and weight of passive and magnetic components, while faster switching times lead to maximum energy efficiency of converters or motor drivers. This story is related to the following:Electronic Components and Devices Sponsored by: Globtek Inc. - Your Power Partner...For Over 20 Years!Integrated Circuits (IC) | Power Switches |
Tags: power
driver
gate
isolated
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