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SiC MOSFET minimizes equipment size and power consumption.
2015-06-09 14:31:04| Industrial Newsroom - All News for Today
Adopting trench structure, SiC MOSFET (Metal Oxide Semiconductor Field Effect Transistor) offers ON resistance that decreases power loss in equipment ranging from industrial inverters and power supplies to power conditioners for solar power systems. Full SiC power module (1,200 V/180 A), incorporating trench-type SiC MOSFETs in a 2-in-1 circuit with integrated SiC SBDs, is also available.
Tags: size
power
equipment
consumption
SiC MOSFET targets high frequency power electronics.
2015-05-19 14:31:06| Industrial Newsroom - All News for Today
Built on SiC planar technology, Model C3M0065090J is suited for renewable energy inverters, electric vehicle charging systems, and 3-phase industrial power supplies. Device is rated at 900 V/32 A with low on-resistance of 65 mΩ at 25°C. At higher temperature operation (TJ = 150°C), RDS(ON) is just 90 mΩ. In addition to industry-standard TO247-3 and TO220-3 packages, MOSFET is available in low-impedance D2Pak-7L surface mount package with Kelvin connection to help minimize gate ringing.
Tags: high
power
electronics
frequency
GaN on SiC HEMT Pulsed Power Transistors offer 650 W peak output.
2015-03-27 13:31:09| Industrial Newsroom - All News for Today
Available in standard flange or earless flange packaging, MAGX-000912-650L00 and MAGX-000912-650L0S are gallium nitride (GaN) on silicon carbide (SiC) HEMT pulsed power transistors intended for L-band pulsed avionics applications. These gold metalized, internally matched, GaN on SiC depletion mode RF power transistors operate over 960–1,215 MHz range and feature 600 year MTTF. Peak output power is 650 W with 20 dB typ gain and 62% drain efficiency.
SIC MOSFETs achieve temperature rating of 200°C.
2015-03-25 13:31:08| Industrial Newsroom - All News for Today
Utilizing high-voltage silicon carbide, STMicroelectronics' SCTx0N120 Series is suited for solar inverters, high-frequency power supplies, and power factor correctors as well as fully electric and hybrid electric vehicles. Model SCT30N120 is rated at 1,200 V and 100 mΩ, while Model SCT20N120 is rated 1,200 V and 290 mΩ. SiC Power MOSFETs are next step versus traditional silicon MOSFETs and IGBTs, for all applications in power conversion running at frequency ≥100 kHz.
Tags: rating
achieve
temperature
sic
MACOM Announces New 650 W GaN On SiC HEMT Pulsed Power Transistor
2015-03-24 06:43:30| wirelessdesignonline News Articles
M/A-COM Technology Solutions Inc. (“MACOM”), a leading supplier of high-performance analog RF, microwave and optical semiconductor products, today announced the new MAGX-000912-650L00 and MAGX-000912-650L0S, a 650 W gallium nitride (GaN) on silicon carbide (SiC) HEMT pulsed power transistor for L-band pulsed avionics applications.
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