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MACOM Announces New 650 W GaN On SiC HEMT Pulsed Power Transistor

2015-03-20 05:45:46| rfglobalnet Home Page

M/A-COM Technology Solutions Inc. (“MACOM”), a leading supplier of high-performance analog RF, microwave and optical semiconductor products, recently announced the new MAGX-000912-650L00 and MAGX-000912-650L0S, a 650 W gallium nitride (GaN) on silicon carbide (SiC) HEMT pulsed power transistor for L-band pulsed avionics applications. This transistor is available in standard flange or earless flange packaging.

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Waseda team develops wide-temperature, high-voltage diamond transistor that can compete with SiC and GaN

2015-02-20 17:55:31| Green Car Congress

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Lux: strategy is key as more efficient GaN, SiC power electronics enter market; automakers as integrators

2015-02-11 12:55:20| Green Car Congress

Tags: enter power key market

 

Toyota beginning on-road testing of new SiC power semiconductor technology; hybrid Camry and fuel cell bus

2015-01-29 12:55:37| Green Car Congress

Tags: power technology cell beginning

 

3D Si@C core-shell Li-ion anodes show high capacity, rate capability and stable cycling

2015-01-11 15:55:30| Green Car Congress

Tags: show high rate capacity

 

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