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GaN on Sic HEMT Transistor

2013-01-25 10:57:51| rfglobalnet Products

These 35W GaN SiC RF Power Transistors are ideal for commercial and military radar, professional and military radio communications systems, jammers, wideband or narrowband filters, and test instrumentation. They cover the DC to 3.5 GHz frequency range and are available in a bolt down flanged package and in a solder down earless package.

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High-performance micro-sized Si-C composite for Li-ion anodes offers high tap density for high volumetric capacity

2013-01-23 15:30:23| Green Car Congress

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Richardson RFPD Introduces Pair Of 35W, 32V GaN On SiC RF Power Transistors From TriQuint

2013-01-17 03:46:47| wirelessdesignonline News Articles

Richardson RFPD, Inc. recently announces immediate availability and full design support capabilities for a pair of 35W Gallium Nitride (GaN) radio frequency power transistors from TriQuint Semiconductor, Inc. (TriQuint).

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Richardson RFPD Introduces Pair Of 35W, 32V GaN On SiC RF Power Transistors From TriQuint

2013-01-17 03:46:47| rfglobalnet News Articles

Richardson RFPD, Inc. recently announces immediate availability and full design support capabilities for a pair of 35W Gallium Nitride (GaN) radio frequency power transistors from TriQuint Semiconductor, Inc. (TriQuint).

Tags: power pair sic introduces

 

Microsemi Expands Silicon Carbide (SiC) Power Module Product Family

2013-01-15 06:00:00| Industrial Newsroom - All News for Today

New Solutions Offered in Industrial and Extended Temperature Ranges<br /> <br /> ALISO VIEJO, Calif., -- Microsemi Corporation (Nasdaq: MSCC), a leading provider of semiconductor solutions differentiated by power, security, reliability and performance, today announced the availability of a new generation of industrial temperature, silicon carbide (SiC) standard power modules. They are ideally suited for use in high power switch mode power supplies, motor drives, uninterruptible power supplies, ...This story is related to the following:Power Modules

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