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GaN on Sic HEMT Transistor
2013-01-25 10:57:51| rfglobalnet Products
These 35W GaN SiC RF Power Transistors are ideal for commercial and military radar, professional and military radio communications systems, jammers, wideband or narrowband filters, and test instrumentation. They cover the DC to 3.5 GHz frequency range and are available in a bolt down flanged package and in a solder down earless package.
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High-performance micro-sized Si-C composite for Li-ion anodes offers high tap density for high volumetric capacity
2013-01-23 15:30:23| Green Car Congress
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Richardson RFPD Introduces Pair Of 35W, 32V GaN On SiC RF Power Transistors From TriQuint
2013-01-17 03:46:47| wirelessdesignonline News Articles
Richardson RFPD, Inc. recently announces immediate availability and full design support capabilities for a pair of 35W Gallium Nitride (GaN) radio frequency power transistors from TriQuint Semiconductor, Inc. (TriQuint).
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Richardson RFPD Introduces Pair Of 35W, 32V GaN On SiC RF Power Transistors From TriQuint
2013-01-17 03:46:47| rfglobalnet News Articles
Richardson RFPD, Inc. recently announces immediate availability and full design support capabilities for a pair of 35W Gallium Nitride (GaN) radio frequency power transistors from TriQuint Semiconductor, Inc. (TriQuint).
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sic
introduces
Microsemi Expands Silicon Carbide (SiC) Power Module Product Family
2013-01-15 06:00:00| Industrial Newsroom - All News for Today
New Solutions Offered in Industrial and Extended Temperature Ranges<br /> <br /> ALISO VIEJO, Calif., -- Microsemi Corporation (Nasdaq: MSCC), a leading provider of semiconductor solutions differentiated by power, security, reliability and performance, today announced the availability of a new generation of industrial temperature, silicon carbide (SiC) standard power modules. They are ideally suited for use in high power switch mode power supplies, motor drives, uninterruptible power supplies, ...This story is related to the following:Power Modules
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