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Tag: hemt
Cree Announces Low Cost Extended Bandwidth GaN HEMT Transistors To Support Data-Hungry Small Cell Networks
2014-05-09 07:29:41| wirelessdesignonline News Articles
As high data rate applications put more strain on LTE wireless networks, innovative solutions such as small cell base stations (BTS) and carrier aggregation will be needed to bridge the bandwidth gap in high traffic areas.
MACOM Announces High Efficiency 500 W GaN On SiC HEMT Pulsed Power Transistor For Avionics Applications
2014-02-07 05:25:25| rfglobalnet News Articles
M/A-COM Technology Solutions Inc. (“MACOM”), a leading supplier of high performance RF, microwave, and millimeter wave products, recently announced a new GaN on SiC HEMT Power Transistor for L-Band pulsed radar applications.
Tags: high
power
applications
efficiency
Transphorm's 600V GaN HEMT Named Product of the Year by Electronics Products Magazine
2014-01-24 06:00:00| Industrial Newsroom - All News for Today
TPH3006PS Device Garners Award for Innovative Advancement in Discrete Semiconductors<br /> <br /> Goleta, CA – Transphorm Inc. is pleased to announce that it has been honored with Electronic Products' Product of the Year Award for its TPH3006PS GaN (Gallium Nitride) device, the first 600V HEMT (High Electron Mobility Transistor) in the industry to be JEDEC qualified.<br /> <br /> The editors of Electronic Products—a leading trade publication for electronic design ...This story is related to the following:Gallium Nitride (GaN) Transistors |
Tags: year
products
product
electronics
Mitsubishi Electric To Launch Ku-Band Low-Noise GaAs HEMT
2013-11-19 05:13:28| rfglobalnet News Articles
Mitsubishi Electric Corporation announced recently it will launch a gallium arsenide (GaAs) high-electron mobility transistor (HEMT), the MGF4937AM, as a low-noise amplifier for receiver modules in direct broadband satellites (DBS) and very small aperture terminals (VSAT).
Tags: electric
launch
mitsubishi
gaas
Mitsubishi Electric To Launch Ku-Band Low-Noise GaAs HEMT
2013-11-19 05:13:28| wirelessdesignonline News Articles
Mitsubishi Electric Corporation announced recently it will launch a gallium arsenide (GaAs) high-electron mobility transistor (HEMT), the MGF4937AM, as a low-noise amplifier for receiver modules in direct broadband satellites (DBS) and very small aperture terminals (VSAT).
Tags: electric
launch
mitsubishi
gaas