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Toshiba Expands High Power C-Band GaN HEMT Product Line to Support the SATCOM Market
2013-06-04 06:00:00| Industrial Newsroom - All News for Today
Optimized for High Power, Gain and Efficiency to Support Extended C-Band Applications<br /> <br /> SEATTLE - 2013 INTERNATIONAL MICROWAVE SYMPOSIUM, Booth #2027 - Toshiba America Electronic Components, Inc. (TAEC)*, a committed leader that collaborates with technology companies to create breakthrough designs, and its parent company, Toshiba Corp., today announced the expansion of its gallium nitride high electron mobility transistor (GaN HEMT) lineup with the addition of three new devices ...This story is related to the following:Telecommunications Integrated Circuits |
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Cree Ships over Two Million GaN HEMT Devices for Telecom Infrastructure
2013-06-03 06:00:00| Industrial Newsroom - All News for Today
DURHAM, N.C. – Cree, Inc. (Nasdaq: CREE) reports it has surpassed a significant milestone in shipping over two million GaN High Electron Mobility Transistors (HEMT) for cellular telecommunications and is providing game-changing benefits over traditional silicon-based technologies, including higher power, higher efficiency and wider bandwidth. As mobile devices such as smartphones are becoming more widespread, telecommunications companies are looking for innovative technologies to improve ...This story is related to the following:Green & CleanSearch for suppliers of: RF Transistors | Gallium Nitride (GaN) Transistors | High Voltage Transistors
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M/A-COM Technology Solutions Announces New 500 W GaN On SiC HEMT Pulsed Power Transistor
2013-05-06 03:34:59| rfglobalnet News Articles
M/A-COM Technology Solutions Inc. (M/A-COM), a leading supplier of high performance analog semiconductor solutions, introduced recently a new market leading GaN on SiC HEMT Power Transistor for L-Band pulsed radar applications.
Tags: power
technology
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sic
50V GaN HEMT for LTE: CGHV22100 Datasheet
2013-03-14 15:55:24| rfglobalnet Downloads
This datasheet includes a description of the CGHV22100 50V GaN HEMT, as well as information on its specifications. For more information on how it can help improve efficiency and drive down overall costs in LTE, 4G, telecom, and BWA amplifier applications, download the datasheet.
50V GaN HEMT for LTE: CGHV22100
2013-03-14 15:53:33| rfglobalnet Products
This GaN HEMT (gallium-nitride high electron mobility transistor) covers the 1.8-2.2 GHz frequency range. It features 20 dB Gain, -35 dBc ACLR (at 25 W PAVE), and 31-35% efficiency (at 25 W PAVE). A high degree of DPD (digital pre-distortion) correction can also be applied to this transistor.