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Analogue And Discretes Cree Aims At The Military With Half Kilowatt GaN HEMT
2013-08-23 05:14:32| rfglobalnet News Articles
Cree has released a 500W gallium nitride HEMTs for 1.2-1.4GHz L-Band radar amplifier systems.
The Expanding Role Of GaN HEMT Devices In Military Electronics Design
2013-07-03 03:25:33| rfglobalnet Downloads
In the early 2000s, military designers developing the next generation of high-frequency, high-power amplifiers for radar, communications and EW equipment had reached the performance limits of conventional technologies, namely Traveling Wave Tubes (TWTs), silicon Laterally Diffused Metal Oxide Semiconductor (Si LDMOS) transistors, and gallium arsenide (GaAs) MESFETs.By Tom Dekker, Cree
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Fujitsu Develops High-Output Mm-Wave Transceiver Based On GaN HEMT
2013-06-25 08:44:09| rfglobalnet News Articles
Fujitsu Laboratories of Kawasaki, Japan has developed compact gallium nitride high-electron-mobility transistor (HEMT)-based transceiver module technology with an output of 10W operating at frequencies up to the millimeter-wave band.
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Toshiba Adds High Gain 200W GaN HEMT Power Amplifier For C-Band Radar Applications
2013-06-07 10:20:04| rfglobalnet News Articles
Toshiba America Electronic Components, Inc. (TAEC)*, a committed leader that collaborates with technology companies to create breakthrough designs, and its parent company, Toshiba Corp., recently announced the addition of a 200W C-Band gallium nitride (GaN) semiconductor High Electron Mobility Transistor (HEMT) to its power amplifier product family.
Tags: high
power
applications
gain
Toshiba Adds High Gain 200W GaN HEMT Power Amplifier for C-Band RADAR Applications
2013-06-04 06:00:00| Industrial Newsroom - All News for Today
Offer High Power, Gain and Efficiency to Enhance Weather RADAR Performance<br /> <br /> SEATTLE - 2013 INTERNATIONAL MICROWAVE SYMPOSIUM, Booth #2027, -Toshiba America Electronic Components, Inc. (TAEC)*, a committed leader that collaborates with technology companies to create breakthrough designs, and its parent company, Toshiba Corp., today announced the addition of a 200W C-Band gallium nitride (GaN) semiconductor High Electron Mobility Transistor (HEMT) to its power amplifier product ...This story is related to the following:Power Transistors | Power Amplifiers
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power
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gain