je.st
news
Tag: hemt
MACOM Announces New 650 W GaN On SiC HEMT Pulsed Power Transistor
2015-03-20 05:45:46| rfglobalnet Home Page
M/A-COM Technology Solutions Inc. (“MACOM”), a leading supplier of high-performance analog RF, microwave and optical semiconductor products, recently announced the new MAGX-000912-650L00 and MAGX-000912-650L0S, a 650 W gallium nitride (GaN) on silicon carbide (SiC) HEMT pulsed power transistor for L-band pulsed avionics applications. This transistor is available in standard flange or earless flange packaging.
Cree Releases Industry's Highest Power 50V GaN HEMT (320W)
2014-12-12 04:08:12| rfglobalnet Home Page
Cree, Inc., a leading global supplier of silicon carbide (SiC) and gallium nitride (GaN) wafers and devices, has extended its family of 50V discrete GaN high electron mobility transistor (HEMT) die with the release of three new components: a 20W, 6GHz die; a 75W, 6GHz die; and a 320W, 4GHz die.
Tags: power
highest
releases
cree
HEMT Power Transistor suits L-Band pulsed radar applications.
2014-08-08 15:45:07| Industrial Newsroom - All News for Today
Operating from 1,200–1,400 MHz, Model MAGX-001214-650L00 guarantees 650 W of peak power with typical 19.5 dB of gain and 60% efficiency. Gold-metalized, pre-matched GaN on Silicon Carbide transistor features very high breakdown voltages, which allow stable operation at 50 V under extreme load mismatch conditions. Assembled in ceramic flange package, transistor provides rugged performance in demanding radar applications. This story is related to the following:Power Transistors |
Tags: power
applications
suits
radar
Technology Advancements To Drive the High Electron Mobility Transistor (HEMT) Market, According To New Trend Report Published By Global Industry Analysts, Inc.
2014-06-20 13:13:13| rfglobalnet Home Page
GIA announces the release of a trend report on High Electron Mobility Transistor (HEMT). Demand for High Electron Mobility Transistor (HEMT) is forecast to be driven by continuous technology developments in the field of transistors.
Tags: inc
high
report
technology
Cree Announces Low Cost Extended Bandwidth GaN HEMT Transistors To Support Data-Hungry Small Cell Networks
2014-05-09 07:29:41| rfglobalnet News Articles
As high data rate applications put more strain on LTE wireless networks, innovative solutions such as small cell base stations (BTS) and carrier aggregation will be needed to bridge the bandwidth gap in high traffic areas